发明名称 Method of manufacturing semiconductor device
摘要 Disclosed herein is a method of manufacturing a semiconductor device that includes: performing a first exposure process with a first exposure mask having a first space pattern formed in a first direction; performing a second exposure process with a second exposure mask different from the first exposure mask, the second exposure mask having a second space pattern formed in a second direction intersected with the first direction; and forming a contact hole by a developing process.
申请公布号 US8507184(B2) 申请公布日期 2013.08.13
申请号 US20080147745 申请日期 2008.06.27
申请人 BAE SANG MAN;SK HYNIX INC. 发明人 BAE SANG MAN
分类号 G03F7/26;G03F7/20 主分类号 G03F7/26
代理机构 代理人
主权项
地址