发明名称 Mechanisms for built-in self repair of memory devices using failed bit maps and obvious repairs
摘要 Failure bit map (FBM) data and a built-in-self-test-repair (BISTR) module enable collecting and analyzing FBM data of an entire memory to identify the best repairing method (or mechanism) to make repairs. By performing obvious repair during collection of the FBM data, testing and date storage resources can be saved. As a result, the repair method is better and more efficient than algorithms (or methods) known to the inventors, which only utilize partial (or incomplete) failure data. The compressed data structures used for the FBMs keep the resources used to capture the FBM data and to repair the failed cells relatively limited.
申请公布号 US8509014(B2) 申请公布日期 2013.08.13
申请号 US201113291620 申请日期 2011.11.08
申请人 SHVYDUN VOLODYMYR;ADHAM SAMAN M. I.;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 SHVYDUN VOLODYMYR;ADHAM SAMAN M. I.
分类号 G11C7/00 主分类号 G11C7/00
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