发明名称 |
Phase-change memory device and method of fabricating the same |
摘要 |
A phase-change memory device with improved deposition characteristic and a method of fabricating the same are provided. The phase-change memory device includes a semiconductor substrate having a phase-change area, a first material-rich first phase-change layer forming an inner surface of the phase-change area and comprised of a hetero compound of the first material and a second material, and a second phase-change layer formed on a surface of the first phase-change layer to fill the phase-change area.
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申请公布号 |
US8508021(B2) |
申请公布日期 |
2013.08.13 |
申请号 |
US20100962183 |
申请日期 |
2010.12.07 |
申请人 |
LEE KEUN;KIM JIN HYOCK;KWON YOUNG SEOK;HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE KEUN;KIM JIN HYOCK;KWON YOUNG SEOK |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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