发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
An insulation film (24) having a gradual inclination of a surface is formed by a high density plasma CVD method, an atmospheric pressure CVD method or the like, after a ferroelectric capacitor (23) is formed. Thereafter, an alumina film (25) is formed on the insulation film (24). According to the method, low coverage of the alumina film (25) does not become a problem, and the ferroelectric capacitor (23) is reliably protected.
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申请公布号 |
US8507965(B2) |
申请公布日期 |
2013.08.13 |
申请号 |
US20100896231 |
申请日期 |
2010.10.01 |
申请人 |
IZUMI KAZUTOSHI;SAITO HITOSHI;SASHIDA NAOYA;SAIGOH KAORU;NAGAI KOUICHI;FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
IZUMI KAZUTOSHI;SAITO HITOSHI;SASHIDA NAOYA;SAIGOH KAORU;NAGAI KOUICHI |
分类号 |
H01L29/76;H01L21/8246;H01L27/115;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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