发明名称 Positive resist composition, pattern forming method using the composition, and compound for use in the composition
摘要 A positive resist composition comprising (A) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (B) a resin capable of increasing the solubility in an alkali developer by the action of an acid, and (C) a compound having a specific structure, which decomposes by the action of an acid to generate an acid, a pattern forming method using the positive resist composition, and a compound for use in the positive resist composition are provided as a positive resist composition exhibiting good performance in terms of pattern profile, line edge roughness, pattern collapse, sensitivity and resolution in normal exposure (dry exposure), immersion exposure and double exposure, a pattern forming method using the positive resist composition and a compound for use in the positive resist composition.
申请公布号 US8507174(B2) 申请公布日期 2013.08.13
申请号 US20080673096 申请日期 2008.08.11
申请人 TAKAHASHI HIDENORI;WADA KENJI;KAMIMURA SOU;FUJIFILM CORPORATION 发明人 TAKAHASHI HIDENORI;WADA KENJI;KAMIMURA SOU
分类号 G03F7/039;G03F7/20;G03F7/30 主分类号 G03F7/039
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