发明名称 METHOD AND STRUCTURE FOR INTEGRATING CAPACITOR-LESS MEMORY CELL WITH LOGIC
摘要 <p>Methods for fabricating integrated circuits include fabricating a logic device on a substrate, forming an intermediate semiconductor substrate on a surface of the logic device, and fabricating a capacitor-less memory cell on the intermediate semiconductor substrate. Integrated circuits with capacitor-less memory cells formed on a surface of a logic device are also disclosed, as are multi-core microprocessors including such integrated circuits.</p>
申请公布号 KR101295960(B1) 申请公布日期 2013.08.13
申请号 KR20117014092 申请日期 2009.12.07
申请人 发明人
分类号 H01L21/8242;H01L27/108 主分类号 H01L21/8242
代理机构 代理人
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