| 摘要 |
<p>PURPOSE: A BCDMOS device and a manufacturing method thereof are provided to uniformly form a thickness by forming a field insulation layer with a thermal oxide film. CONSTITUTION: A logic device is formed on a logic area. A high voltage device is formed on a high voltage area. A trench is formed on a semiconductor substrate (100). A device isolation layer (122) is formed with an insulation layer. A field insulation layer (124C,124D) is formed on the surface of the semiconductor substrate.</p> |
