发明名称 |
Methods of forming a patterned, silicon-enriched developable antireflective material and semiconductor device structures including the same |
摘要 |
Methods of forming a patterned, silicon-enriched developable antireflective material. One such method comprises forming a silicon-enriched developable antireflective composition. The silicon-enriched developable antireflective composition comprises a silicon-enriched polymer and a crosslinking agent. The silicon-enriched polymer and the crosslinking agent are reacted to form a silicon-enriched developable antireflective material that is insoluble and has at least one acid-sensitive moiety. A positive-tone photosensitive material, such as a positive-tone photoresist, is formed over the silicon-enriched developable antireflective material and regions thereof are exposed to radiation. The exposed regions of the positive-tone photosensitive material and underlying regions of the silicon-enriched developable antireflective material are removed. Additional methods are disclosed, as are semiconductor device structures including a silicon-enriched developable antireflective material.
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申请公布号 |
US8507191(B2) |
申请公布日期 |
2013.08.13 |
申请号 |
US20110986806 |
申请日期 |
2011.01.07 |
申请人 |
MILLWARD DAN B.;HE YUAN;GOU LIJING;ZHANG ZISHU;DEVILLIERS ANTON J.;ZHOU JIANMING;JAIN KAVERI;LIGHT SCOTT;HYATT MICHAEL;MICRON TECHNOLOGY, INC. |
发明人 |
MILLWARD DAN B.;HE YUAN;GOU LIJING;ZHANG ZISHU;DEVILLIERS ANTON J.;ZHOU JIANMING;JAIN KAVERI;LIGHT SCOTT;HYATT MICHAEL |
分类号 |
G03F7/26 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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