发明名称 |
Low resistance embedded strap for a trench capacitor |
摘要 |
A trench is formed in a semiconductor substrate, and is filled with a node dielectric layer and at least one conductive material fill portion that functions as an inner electrode. The at least one conductive material fill portion includes a doped polycrystalline semiconductor fill portion. A gate stack for an access transistor is formed on the semiconductor substrate, and a gate spacer is formed around the gate stack. A source/drain trench is formed between an outer sidewall of the gate spacer and a sidewall of the doped polycrystalline semiconductor fill portion. An epitaxial source region and a polycrystalline semiconductor material portion are simultaneously formed by a selective epitaxy process such that the epitaxial source region and the polycrystalline semiconductor material portion contact each other without a gap therebetween. The polycrystalline semiconductor material portion provides a robust low resistance conductive path between the source region and the inner electrode.
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申请公布号 |
US8507915(B2) |
申请公布日期 |
2013.08.13 |
申请号 |
US201113307787 |
申请日期 |
2011.11.30 |
申请人 |
NUMMY KAREN A.;PEI CHENGWEN;RAUSCH WERNER A.;WANG GENG;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
NUMMY KAREN A.;PEI CHENGWEN;RAUSCH WERNER A.;WANG GENG |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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