发明名称 Method of forming a photomask layout using optical proximity correction to compensate for a three-dimensional mask effect
摘要 A method of forming a layout of a photomask includes receiving a layout of a mask pattern, obtaining image parameters of a two-dimensional (2D) layout mask from a simulation, obtaining image parameters of a three-dimensional (3D) layout mask from a simulation, and obtaining differences between the image parameters of the 2D and 3D masks. The differences between the image parameters of the 2D and 3D masks can be compensated by convolving a probability function with respect to an open area, represented by a visible kernel function, with a mask function to produce a first function, convolving a probability function with respect to a blocked area, represented by a visible kernel function, with the mask function to produce a second function, and summing the first function and the second function to produce a compensated vector. The layout of the mask pattern can be corrected using the compensated vector.
申请公布号 US8510684(B2) 申请公布日期 2013.08.13
申请号 US201113327379 申请日期 2011.12.15
申请人 JEONG MOON-GYU;CHOI SEONG-WOON;SER JUNG HOON;SAMSUNG ELECTRONICS CO., LTD. 发明人 JEONG MOON-GYU;CHOI SEONG-WOON;SER JUNG HOON
分类号 G06F17/50;G06F7/60 主分类号 G06F17/50
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