| 发明名称 |
Memristive transistor memory |
| 摘要 |
A memory device (100) includes a semiconductor wire including a source region (132), a drain region (134), and a channel region (130) between the source region (132) and the drain region (134). A gate structure that overlies the channel region includes a memristive portion (120) and a conductive portion (110) overlying the memristive portion (120).
|
| 申请公布号 |
US8507968(B2) |
申请公布日期 |
2013.08.13 |
| 申请号 |
US200913142581 |
申请日期 |
2009.01.30 |
| 申请人 |
STRUKOV DMITRI B.;KUEKES PHILIP J.;STEWART DUNCAN;LI ZHIYONG;HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
STRUKOV DMITRI B.;KUEKES PHILIP J.;STEWART DUNCAN;LI ZHIYONG |
| 分类号 |
H01L29/76;H01L21/336 |
主分类号 |
H01L29/76 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
