发明名称 Control method of non-volatile semiconductor device
摘要 A method includes temporarily storing write-data to be written into non-volatile memory cells, respectively, the memory cells being divided into cell groups, performing a first operation including write-phases performed in series and on an associated cell group and including applying a write-voltage to the memory cells belonging to the associated cell group in response to an associated write-data to be written into the memory cells belonging to the cell groups, and performing a second operation after the first operation is completed, which includes read-phases performed in series and on an associated cell group and including applying a first read-voltage to the memory cell or cells belonging to the associated one of the cell groups to produce first read-data therefrom, and comparing the first read-data with the write-data to be written into the memory cells belonging to the associated cell groups to produce comparison data.
申请公布号 US8510613(B2) 申请公布日期 2013.08.13
申请号 US20110929939 申请日期 2011.02.25
申请人 SEKO AKIYOSHI;ELPIDA MEMORY, INC. 发明人 SEKO AKIYOSHI
分类号 G11C29/00 主分类号 G11C29/00
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