发明名称 |
THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR SUBSTRATE |
摘要 |
<p>PURPOSE: Thin film transistor substrate and manufacturing method of the thin film transistor substrate are provided to improve the manufacturing reliability by minimizing damage in glass substrate, insulation layer or pure copper film. CONSTITUTION: A gate pattern (GP) includes a gate line and a gate electrode. A source pattern (SP) includes a data line crossing with the gate line, a source electrode connected to the data line and a drain electrode separated from the source electrode. A pixel electrode (PE) contacts with the drain electrode. One of the gate pattern and source pattern is formed on a pure copper film and lower part of the pure copper film and includes a conductive film including selected one from a group consisting of copper alloy nitride and copper alloy oxide nitride.</p> |
申请公布号 |
KR20130089419(A) |
申请公布日期 |
2013.08.12 |
申请号 |
KR20120010755 |
申请日期 |
2012.02.02 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
KIM, BYEONG BEOM;PARK, JOON YONG;SHIN, SANG WON;JEONG, CHANG OH |
分类号 |
G02F1/136;H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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