发明名称 |
PROGRAMMABLE SWITCH DEVICE AND FABRICATING METHOD THEREOF |
摘要 |
<p>PURPOSE: A programmable switch element and a manufacturing method thereof are provided to improve the performance of the programmable switch element by controlling a thermal treatment temperature and the quantity of Sb. CONSTITUTION: An SiO2 layer is formed on a substrate. An SiGeSb thin film layer is formed on the SiO2 layer. A GeSbTe thin film layer is formed on the SiGeSb thin film layer. A first terminal is formed on the GeSbTe thin film layer. The SiGeSb thin film layer functions as a high resistance heating layer.</p> |
申请公布号 |
KR20130089381(A) |
申请公布日期 |
2013.08.12 |
申请号 |
KR20120010704 |
申请日期 |
2012.02.02 |
申请人 |
HANBAT NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION |
发明人 |
LEE, SEUNG YOON |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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