发明名称 VIA CONNECTION STRUCTURES AND SEMICONDUCTOR DEVICES HAVING THE SAME, AND METHODS OF FABRICATING THE SAMES
摘要 <p>PURPOSE: A via connection structure, a semiconductor device including the same, and manufacturing methods thereof are provided to prevent a contact failure by including a wiring barrier layer. CONSTITUTION: A substrate has a first side and a second side. The second side faces the first side. A through via structure (45a) includes a first end and a second end. An insulation layer (30) has a rewiring groove. A rewiring structure (50) includes a rewiring barrier layer and a rewiring part.</p>
申请公布号 KR20130089544(A) 申请公布日期 2013.08.12
申请号 KR20120010983 申请日期 2012.02.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, HO JIN;KANG, PIL KYU;LEE, KYU HA;CHOI, GIL HEYUN;PARK, BYUNG LYUL;CHUNG, HYUN SOO
分类号 H01L21/768;H01L21/28 主分类号 H01L21/768
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