VIA CONNECTION STRUCTURES AND SEMICONDUCTOR DEVICES HAVING THE SAME, AND METHODS OF FABRICATING THE SAMES
摘要
<p>PURPOSE: A via connection structure, a semiconductor device including the same, and manufacturing methods thereof are provided to prevent a contact failure by including a wiring barrier layer. CONSTITUTION: A substrate has a first side and a second side. The second side faces the first side. A through via structure (45a) includes a first end and a second end. An insulation layer (30) has a rewiring groove. A rewiring structure (50) includes a rewiring barrier layer and a rewiring part.</p>
申请公布号
KR20130089544(A)
申请公布日期
2013.08.12
申请号
KR20120010983
申请日期
2012.02.02
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
LEE, HO JIN;KANG, PIL KYU;LEE, KYU HA;CHOI, GIL HEYUN;PARK, BYUNG LYUL;CHUNG, HYUN SOO