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发明名称
成膜方法及记忆媒体(二)
摘要
本发明关于一种成膜方法及记忆媒体,该成膜方法系将基板收纳至处理容器内,并在气相状态下将含有钴脒之成膜原料与含有羧酸之还原剂导入至处理容器内,而于基板上形成Co膜。
申请公布号
TWI404822
申请公布日期
2013.08.11
申请号
TW099131351
申请日期
2010.09.16
申请人
东京威力科创股份有限公司 日本
发明人
小岛康彦;东云秀司
分类号
C23C16/54;C23C16/06
主分类号
C23C16/54
代理机构
代理人
林秋琴 台北市大安区敦化南路1段245号8楼;何爱文 台北市大安区敦化南路1段245号8楼
主权项
地址
日本
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