METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a silicon carbide semiconductor device is provided to stably manufacture the silicon carbide semiconductor device with constant electrical features by suppressing damage on the interface of metal and silicon carbide. CONSTITUTION: A pair of electrodes are composed of an anode (22) and a cathode (21). A target (23) is made of metal materials. A metal layer is formed on a silicon carbide base (10) by sputtering the target. The incident energy of a sputtering gas and the metal materials on the silicon carbide base is smaller than the combination energy of the silicon carbide. A high frequency voltage applied between the electrodes is 20 to 300V.