| 摘要 |
A resist stripping solution containing particles is provided to realize an excellent stripping effect to a resist film while not adversely affecting the structure of a circuit. A resist stripping solution comprises particles and at least one compound selected from amine compounds and alkylene glycol compounds. The particles have a diameter of primary particles of 5-1,000 nm. The particle is an inorganic particle selected from silicon dioxide, aluminum oxide, cerium oxide and titanium nitride, and/or an organic resin selected from an epoxy resin, styrene resin and acrylic resin. |
