| 摘要 |
A method for forming a pattern is provided. A photoresist layer constituted by organic dye, which is capable of deformation in a heat mode, is formed on a substrate. A laser beam is irradiated onto the photoresist layer, to form hole portions in the photoresist layer at portions onto which the laser beam is irradiated. The photoresist layer is etched within a vacuum using a predetermined gas, following the step in which the hole portions are formed in the photoresist layer. |
