| 摘要 |
<p>Disclosed are a laser annealing method and device capable of applying sufficient energy to an amorphous silicon film and efficiently causing a phase change therein when laser annealing the amorphous silicon layer and forming a low temperature polysilicon film, even when using an inexpensive laser light source device such as a YAG laser. A fundamental wave from a YAG light source (11) is converted with wavelength converters (12, 13) into a second harmonic and a third harmonic, and the third harmonic laser light is beamed upon a body to be beamed (18), while the fundamental wave is beamed upon the body to be beamed (18) at delays of approximately 10ns and 20ns, via an approximately 3m third optical assembly (21) and an approximately 6m fourth optical assembly (22). The fused part of the amorphous silicon film that is fused with the third harmonic is thus beamed by the fundamental wave being segmented into a P wave and an S wave, and the YAG fundamental wave, which is not absorbed by the amorphous silicon film, is absorbed by the fused silicon, and is efficaciously used in the heating thereof.</p> |
