发明名称 |
SENSE AMPLIFIER FOR NONVOLATILE SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A sense amplifier circuit of a nonvolatile semiconductor memory device is provided. The sense amplifier circuit includes a reference voltage generator, a sensing voltage generator and a comparator. The sensing voltage generator outputs a sensing voltage to a sensing node depending on a current flowing through a data line. A load transistor supplying a current to the data line is directly connected to a clamping node. The load transistor is included in a current mirror circuit. In a read operation, a low voltage drive operation is performed and a sensing speed and power consumption are properly controlled. |
申请公布号 |
US2013201761(A1) |
申请公布日期 |
2013.08.08 |
申请号 |
US201213715471 |
申请日期 |
2012.12.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM EUI-SEUNG;KIM JI-SUNG;O SEEUN |
分类号 |
G11C16/28 |
主分类号 |
G11C16/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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