发明名称 Quantum dots photovoltaic
摘要 PURPOSE: A quantum dot solar battery is provided to increase the power generating efficiency of a solar battery by preventing the surface recombination of a carrier generated by absorbing the light in the silicon solar cell. CONSTITUTION: A P+ layer is formed on the lower part of a silicon wafer(10). A passivation layer and a charge separation layer(11) are formed, on which a quantum dot(QD) is formed on the top of the silicon wafer. The surface recombination of the carrier generated by absorbing the light is prevented by the quantum dot of passivation layer and the charge separation layer. A quantum dot layer(13) is formed on the lower part of the silicon wafer.
申请公布号 KR101294770(B1) 申请公布日期 2013.08.08
申请号 KR20080117702 申请日期 2008.11.25
申请人 发明人
分类号 H01L31/04;H01L31/042 主分类号 H01L31/04
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