发明名称 |
LASER USING LOCALLY STRAINED GERMANIUM ON SILICON FOR OPTO-ELECTRONIC APPLICATIONS |
摘要 |
The subject matter disclosed herein relates to formation of silicon germanium devices with tensile strain. Tensile strain applied to a silicon germanium device in fabrication may improve performance of a silicon germanium laser or light detector.
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申请公布号 |
US2013202005(A1) |
申请公布日期 |
2013.08.08 |
申请号 |
US201213368162 |
申请日期 |
2012.02.07 |
申请人 |
DUTT BIRENDRA;APIC CORPORATION |
发明人 |
DUTT BIRENDRA |
分类号 |
H01S5/026;H01L21/329 |
主分类号 |
H01S5/026 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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