发明名称 |
VARIABLE RESISTANCE MEMORY DEVICE AND RELATED METHOD OF OPERATION |
摘要 |
A variable resistance memory device comprises a variable resistance memory cells and a read/write circuit configured to provide a program voltage to the variable resistance memory cell, and further configured to adjust a compliance current flowing through the variable resistance memory cell in successive loops of a program operation.
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申请公布号 |
US2013201750(A1) |
申请公布日期 |
2013.08.08 |
申请号 |
US201213648296 |
申请日期 |
2012.10.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE CHEON AN;KWAK DONGHUN |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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