WORD SHIFT STATIC RANDOM ACCESS MEMORY (WS-SRAM)

摘要

Word shift static random access memory (WS-SRAM) cell, word shift static random access memory (WS-SRAM) and method using the same employ dynamic storage mode switching to shift data. The WS-SRAM cell includes a static random access memory (SRAM) cell having a pair of cross-coupled elements to store data, a dynamic/static (D/S) mode selector to selectably switch the WS-SRAM cell between the dynamic storage mode and a static storage mode, and a column selector to selectably determine whether or not the WS-SRAM cell accepts shifted data. The WS-SRAM includes a plurality of WS-SRAM cells arranged in an array and a controller to shift data. The method includes switching a storage mode and activating a column selector of, coupling data from an adjacent memory cell to, and storing the coupled data in, a selected WS-SRAM cell.