| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device in which variation of charge transfer time due to the arrangement position of photosensitive elements can be reduced.SOLUTION: The solid-state imaging device includes a pixel array 1 in which photosensitive pixels for converting incident light into signal charges are arranged in array on a semiconductor substrate, charge detection parts 2 each provided for every 8 photosensitive pixels and converting signal charges output from 8 photosensitive pixels into an output signal, and a charge transfer part 3 provided between the 8 photosensitive pixels and the charge detection part 2. The charge transfer part 3 has transfer paths T11-T13 and T1-T4 for transferring signal charges from the photosensitive pixels PD1-PD8 to the charge detection part 2, and a plurality of transfer electrodes 31, 32 consisting of first and second transfer electrodes 311, 312 and 321, 322 arranged on the transfer paths T1-T4 in the charge transfer direction. The transfer paths T1-T4 formed under the first and second transfer electrodes have a width becoming narrower gradually in the charge transfer direction. |
