发明名称 |
Meander Line Resistor Structure |
摘要 |
A meander line resistor structure comprises a first resistor formed on a first active region, wherein the first resistor is formed by a plurality of first vias connected in series, a second resistor formed on a second active region, wherein the second resistor is formed by a plurality of second vias connected in series and a third resistor formed on the second active region, wherein the third resistor is formed by a plurality of third vias connected in series. The meander line resistor further comprises a first connector coupled between the first resistor and the second resistor.
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申请公布号 |
US2013200448(A1) |
申请公布日期 |
2013.08.08 |
申请号 |
US201213365303 |
申请日期 |
2012.02.03 |
申请人 |
YEN HSIAO-TSUNG;LIN YU-LING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YEN HSIAO-TSUNG;LIN YU-LING |
分类号 |
H01L27/108;H01L21/8234;H01L29/8605 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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