发明名称 Meander Line Resistor Structure
摘要 A meander line resistor structure comprises a first resistor formed on a first active region, wherein the first resistor is formed by a plurality of first vias connected in series, a second resistor formed on a second active region, wherein the second resistor is formed by a plurality of second vias connected in series and a third resistor formed on the second active region, wherein the third resistor is formed by a plurality of third vias connected in series. The meander line resistor further comprises a first connector coupled between the first resistor and the second resistor.
申请公布号 US2013200448(A1) 申请公布日期 2013.08.08
申请号 US201213365303 申请日期 2012.02.03
申请人 YEN HSIAO-TSUNG;LIN YU-LING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 YEN HSIAO-TSUNG;LIN YU-LING
分类号 H01L27/108;H01L21/8234;H01L29/8605 主分类号 H01L27/108
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