<p>PURPOSE: A method for manufacturing a back electrode type solar cell is provided to prevent the recombination of holes and surface defects by minimizing a p-type doping layer exposed to the back surface of a substrate. CONSTITUTION: The back surface of a substrate (301) is covered with a p-type doping source. A mask pattern with an opening part is formed on the p-type doping source. The substrate is heat-treated to form a p-type doping layer (304) and to form a diffusion byproduct layer on the p-type doping layer at the same time. The back surface of the substrate including the diffusion byproduct layer is covered with an n-type doping source. The substrate is heat-treated to remove the mask pattern and to form an n-type doping layer (307). [Reference numerals] (AA) Second interface; (BB) First interface</p>
申请公布号
KR20130088643(A)
申请公布日期
2013.08.08
申请号
KR20120010016
申请日期
2012.01.31
申请人
HYUNDAI HEAVY INDUSTRIES CO., LTD.
发明人
LEE, JOON SUNG;LEE, WON JAE;CHOI, JIN HO;HWANG, MYUNG ICK;SEO, JAE WON;KIM, SANG KYUN