发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To resolve the problems that it is difficult for a conventional semiconductor device to suppress increase in temperature in a semiconductor device, and that provision of a pipe and the like in which cooling medium flows in the semiconductor device causes increase in size of the semiconductor device.SOLUTION: An N-type semiconductor and a P-type semiconductor are laminated in an axial direction of a cylindrical outer package. By setting an outer diameter of one of the N-type semiconductor and the P-type semiconductor to be larger than an inner diameter of the outer package, the N-type semiconductor or the P-type semiconductor tightly contacts with the outer package. Thereby, heat transfer in the semiconductor can be improved, and increase in temperature of the semiconductor device can be suppressed.
申请公布号 JP2013152952(A) 申请公布日期 2013.08.08
申请号 JP20130080027 申请日期 2013.04.06
申请人 INSTITUTE OF ENERGY ENGINEERING INC 发明人 TSUTSUMI KAZUO
分类号 H01L21/331;H01L29/73;H01L29/861;H01L29/868;H01M2/02;H01M2/10;H01M2/20;H01M2/26;H01M2/30;H01M2/34;H01M4/38;H01M4/75;H01M10/28;H01M10/60;H01M10/613;H01M10/617;H01M10/654;H01M10/6563;H05K7/20 主分类号 H01L21/331
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