| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method that has excellent uniformity and exposure latitude of a local pattern dimension in formation of a fine pattern such as a hole pattern with a pore diameter of 45 nm or smaller and suppresses the occurrence of a water residue defect, an actinic ray-sensitive or radiation-sensitive resin composition used for the same, a resist film, a manufacturing method of an electronic device, and an electronic device; in particular, a pattern forming method suitable for liquid immersion exposure, an actinic ray-sensitive or radiation-sensitive resin composition used for the same, a resist film, a manufacturing method of an electronic device, and an electronic device.SOLUTION: A pattern forming method includes: (a) a step of forming a film by an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A) that increases polarity by the action of acid and decreases solubility to a developing solution containing an organic solvent, a compound (B) that generates acid by irradiation with an actinic ray or radiation, a solvent (C), and a resin (D) that is different from the resin (A) and substantially does not contain fluorine atoms and silicon atoms; (b) a step of exposing the film; and (c) a step of developing the film by using a developing liquid containing an organic solvent to form a negative pattern. The content of the resin (D) relative to the total solid content of the actinic ray-sensitive or radiation-sensitive resin composition is 0.1 mass% or more and less than 10 mass%; and the mass content of a CHpartial structure of a side chain part in the resin (D) accounts for 12.0% or more of the resin (D). |
