FILM FORMATION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a film formation method which improves controllability and uniformity of the additive amount.SOLUTION: A film formation apparatus includes: a rotation table on which multiple wafers are placed; a first reaction gas supply region and a second reaction gas supply region which are defined above the rotation table; and a separation region separating the first reaction gas supply region from the second reaction gas supply region. A film formation method used in the film formation apparatus includes steps of: supplying a first reaction gas to the first reaction gas supply region without supplying a reaction gas to the second reaction gas supply region and exposing a wafer to the first reaction gas by rotations of the rotation table thereby causing a wafer surface to absorb the gas; and supplying a second reaction gas to the second reaction gas supply region without supplying the reaction gas to the first reaction gas supply region following the previous step and exposing the wafer to the second reaction gas by the rotations of the rotation table thereby causing the first reaction gas absorbed by the wafer surface to react with the second reaction gas. The above object is achieved by the film formation method.