| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface emitting laser array which can reduce the difference of etching depth in the in-plane direction of a substrate without using a dummy element.SOLUTION: The surface emitting laser array includes a plurality of surface emitting laser elements each consisting of the structure of a surface emitting laser element 1. In the surface emitting laser element 1, a reflective layer 102 consists of (n-AlAs/n-AlGaAs) of 40.5 period, and each of resonator spacer layers 103 and 105 consists of (AlGa)InP. An active layer 104 consists of a quantum well structure including a well layer consisting of GaInPAs, and a barrier layer consisting of GaInP. Furthermore, a reflective layer 106 consists of (p-AlGaAs/AlGaAs) of 24 periods. A bottom face of a mesa structure is located in the way of the resonator spacer layer 103 which absorbs the difference of etching depth in the reflective layer 106. |
