| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of improving cutting reliability of an adhesive film and suppressing debris contamination by the adhesive film.SOLUTION: The method for manufacturing a semiconductor device comprises the steps of: forming a groove on a surface of a semiconductor wafer, sticking a self-adhesive film for protection, and exposing the groove from a rear surface of the semiconductor wafer by grinding the rear surface of the semiconductor wafer; sticking an adhesive film to the rear surface of the semiconductor wafer and peeling the self-adhesive film for protection; and cutting the adhesive film by irradiating the semiconductor wafer with a laser of a 355-nm wavelength along the groove from which the adhesive film is exposed. In the adhesive film, (a) an absorbency index in a 355-nm wavelength is greater than or equal to 40 cm, (b) a tensile storage elastic modulus at 50°C is higher than or equal to 0.5 MPa and less than or equal to 20 MPa, and (c) a tensile storage elastic modulus at 120°C is higher than or equal to 0.3 MPa and less than or equal to 7 MPa or a melt viscosity at 120°C is higher than or equal to 2000 Pa s. |
