发明名称 |
DETERMINATION METHOD OF SUBSTRATE SUCTION STATE AND PLASMA PROCESSING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for determining a state of a substrate suctioned to a support medium disposed in a processing tank during plasma processing and a plasma processing apparatus realizing the method.SOLUTION: A plasma processing apparatus 100 includes: a processing tank 101 using plasma; a support medium 103 disposed in the processing tank 101 and on which a substrate 102 is placed contacting with one surface 107s; temperature measurement means 104 attached to the support medium 103 and measuring a temperature of an area near the one surface 107s; and temperature control means 105 attached to the support medium 103 and controlling the temperature of the area near the one surface 107s. A determination method of a substrate suction state includes the steps of: using the plasma processing apparatus 100 and measuring a first temperature T1 of the substrate 102 by the temperature measurement means 104 before plasma is generated; measuring a second temperature T2 of the substrate 102 by the temperature measurement means 104 after the plasma is generated; and determining the suction state of the substrate 102 suctioned to the support medium 103 on the basis of a positive or negative sign attached to a value showing a difference T2-T1 between the first temperature T1 and the second temperature T2. |
申请公布号 |
JP2013153017(A) |
申请公布日期 |
2013.08.08 |
申请号 |
JP20120012272 |
申请日期 |
2012.01.24 |
申请人 |
ULVAC JAPAN LTD |
发明人 |
NAKAMURA SHINYA;MORIMOTO NAOKI |
分类号 |
H01L21/683;H01L21/205;H01L21/265;H01L21/3065 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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