METHOD FOR TREATING OXYGEN-CONTAINING SEMICONDUCTOR WAFER, AND SEMICONDUCTOR COMPONENT

摘要

PROBLEM TO BE SOLVED: To provide a method for treating an oxygen-containing wafer in which a zone having a high density of oxygen precipitates is produced in a wafer region opposite a region near a surface of a wafer.SOLUTION: A vertical power semiconductor component comprises: a semiconductor body having a semiconductor substrate 100' produced according to the Czochralski method, where the semiconductor substrate has a semiconductor zone 103 low in oxygen precipitates; and a component zone 23 which: is designed to withstand a reverse voltage when the component is driven in the off state; is arranged at least partly in the semiconductor zone 103 low in oxygen precipitates; and has an n-type basic doping formed by hydrogen-induced donors.