| 摘要 |
A semiconductor device has a substrate having a front surface, and a rear surface including a fin forming region and a peripheral region surrounding the fin forming region. An insulating substrate is disposed on the front surface of the substrate. A semiconductor chip is disposed on the insulating substrate. A plurality of fins is formed in the fin forming region, and a reinforcing member is formed on the substrate through a bonding member, so as to overlap the peripheral region.
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