INTERNAL VOLTAGE GENERATING CIRCUIT, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME, AND METHOD OF GENERATING INTERNAL VOLTAGE

摘要

An internal voltage generating circuit and a semiconductor memory device including the internal voltage generating circuit are disclosed. The internal voltage generating circuit includes a first voltage generating circuit, a second voltage generating circuit, and a third voltage generating circuit. The first voltage generating circuit stabilizes a first external supply voltage to generate a first internal voltage. The second voltage generating circuit stabilizes the first external supply voltage and a second external supply voltage to generate a second internal voltage having a voltage level higher than the first internal voltage. The third voltage generating circuit stabilizes the second internal voltage to generate a third internal voltage having a voltage level lower than the second internal voltage. Accordingly, the semiconductor memory device may be insensitive to a change in an external supply voltage and have small power consumption.