| 摘要 |
According to one embodiment, a control circuit of a memory cell array is configured to write data to a memory cell array by applying a first write pass voltage, which is lower than the program voltage, to a first group of nonselective word lines adjacent to a selective word line. The control circuit is further configured to apply a second write pass voltage, which is higher than the first write pass voltage, to a second group of second nonselective word lines, the second group not including the word lines of the first group. |
