| 摘要 |
PROBLEM TO BE SOLVED: To reduce read time of high resolution memory devices.SOLUTION: A system comprises a voltage generator, current sensing amplifiers, and a control module. The voltage generator outputs a first voltage, which is generated based on received codewords, to a first word line connected with N transistors each having programmable threshold voltages, where N is an integer greater than 1. The current sensing amplifiers sense currents through the N transistors via N bit lines, respectively, and generate control signals when a current through a corresponding one of the N transistors is greater than or equal to a predetermined current. The control module generates measured values of the threshold voltages of the N transistors by compensating each of the codewords on the basis of at least one of positions of the corresponding ones of the N transistors and a temperature. |
