| 摘要 |
PROBLEM TO BE SOLVED: To suppress a characteristic variation of a semiconductor device having a field plate part.SOLUTION: The field plate part of the semiconductor device comprises: an insulating film having a first portion formed on a surface of a semiconductor substrate, and a plurality of second portions thicker than the first portion and formed on a surface of the first portion at intervals from an inner side to an outer side with respect to a plane direction of the semiconductor substrate; a plurality of first electrodes formed in areas of the surface of the first portion of the insulating film where there are no second portions formed, and arranged at intervals from the inner side to the outer side with respect to the plane direction of the semiconductor substrate; and a plurality of second electrodes formed on surfaces of the second portions of the insulating film separately from the first electrodes, and arranged at intervals from the inner side to the outer side with respect to the plane direction of the semiconductor substrate. The second portions have a width in the direction from the inner side to the outer side with respect to the plane direction of the semiconductor substrate which is smallest on a side near to the semiconductor substrate and increases away from the semiconductor substrate. In a plan view of the semiconductor device, the first electrodes overlap with adjacent second electrodes. |
