发明名称 NONVOLATILE MEMORY DEVICE AND MEMORY CARD INCLUDING THE SAME
摘要 There is provided a nonvolatile memory device including a memory cell array including nonvolatile memory cells, a battery not supplied with external power and configured to store a charged voltage, a sensing unit configured to sense a degradation state of the nonvolatile memory cells of the memory cell array, and a trigger circuit configured to transmit a refresh trigger signal based on the sensing result, wherein the nonvolatile memory cells of the memory cell array are refreshed using the charged voltage provided by the battery in response to the trigger signal transmitted from the trigger circuit.
申请公布号 US2013205075(A1) 申请公布日期 2013.08.08
申请号 US201313756784 申请日期 2013.02.01
申请人 SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG ELECTRONICS CO., LTD. 发明人 TWITTO MOSHE;ADAR RUTIE;LANDIS SHAY
分类号 G11C16/26;G06F12/02;G11C16/34 主分类号 G11C16/26
代理机构 代理人
主权项
地址