| 摘要 |
A light emitting diode and a manufacturing method thereof are provided to perform the light emitting at both sides by forming two driving thin film transistors on both ends of on pixel and laminating two light emitting layers on the same plane. A light emitting diode includes a substrate(310), a pixel, first and second driving elements(314,324), an interlayer insulation film(311), a first light emitting part(316), a first electrode(312), a common electrode(318), a second light emitting part(326), and a second electrode(328). The pixel is defined on the substrate(310). The first and second driving elements(314,324) are formed on both ends of the pixel for increasing a light emitting area and an opening rate inside the pixel. The interlayer insulation layer(311) is formed between the first and second driving elements(314,324). The first light emitting part(316) is electrically connected to the first driving element(314) for emitting the light. The first electrode(312) is formed on the first driving element(314). The common electrode(318) is formed on the first light emitting part(316). The second light emitting part(326) is formed on the common electrode(318). The second electrode(328) is electrically connected to the second driving element(324). |
