发明名称 |
SUBSTRATE PROCESSING APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND PROGRAM |
摘要 |
PROBLEM TO BE SOLVED: To easily remove by-products etc. remaining in an exhaust part.SOLUTION: A substrate processing apparatus includes: a processing chamber where a substrate is housed; a first gas supply part supplying a first process gas containing predetermined chemical elements to the substrate; a second gas supply part supplying a second process gas containing predetermined chemical elements and halogen to the substrate; an exhaust part exhausting air in the processing chamber; a cleaning gas bypass supply part supplying a cleaning gas to the exhaust part without passing the cleaning gas through the processing chamber; a cleaning monitoring part provided at the exhaust part and detecting the state of the exhaust part; and a control part controlling the cleaning gas supply conducted by the cleaning gas bypass supply part according to the state of the exhaust part detected by the cleaning monitoring part. |
申请公布号 |
JP2013153159(A) |
申请公布日期 |
2013.08.08 |
申请号 |
JP20120285311 |
申请日期 |
2012.12.27 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
KOSHI YASUNOBU;SUZAKI KENICHI;YOSHINO AKIHITO |
分类号 |
H01L21/205;C23C16/44;H01L21/3065 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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