发明名称 SUBSTRATE PROCESSING APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND PROGRAM
摘要 PROBLEM TO BE SOLVED: To easily remove by-products etc. remaining in an exhaust part.SOLUTION: A substrate processing apparatus includes: a processing chamber where a substrate is housed; a first gas supply part supplying a first process gas containing predetermined chemical elements to the substrate; a second gas supply part supplying a second process gas containing predetermined chemical elements and halogen to the substrate; an exhaust part exhausting air in the processing chamber; a cleaning gas bypass supply part supplying a cleaning gas to the exhaust part without passing the cleaning gas through the processing chamber; a cleaning monitoring part provided at the exhaust part and detecting the state of the exhaust part; and a control part controlling the cleaning gas supply conducted by the cleaning gas bypass supply part according to the state of the exhaust part detected by the cleaning monitoring part.
申请公布号 JP2013153159(A) 申请公布日期 2013.08.08
申请号 JP20120285311 申请日期 2012.12.27
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 KOSHI YASUNOBU;SUZAKI KENICHI;YOSHINO AKIHITO
分类号 H01L21/205;C23C16/44;H01L21/3065 主分类号 H01L21/205
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