| 摘要 |
PROBLEM TO BE SOLVED: To provide a dielectric thin film in which a long crack extending on a film surface thereof is not present and which is high in dielectric voltage.SOLUTION: In manufacturing of the dielectric thin film whose composition is composed of BaSrTiO(0≤x≤1, 0.9≤y≤1.1), a precursor of the thin film is coated on a substrate and dried, and then the dried thin film is subjected to main burning at a temperature rising rate of 30°C/min or less, thereby, the dielectric thin film is formed in such a manner that a mean primary particle diameter is 70 nm or more, a continually straight crack of 1.5 μm or more in length is not present on a surface of the thin film, and leakage current density at voltage 5 V is less than 10A/cmor the leakage current density at voltage 20 V is less than 10A/cm. |
