| 摘要 |
<p>The method involves conducting a gas flow (32) through a portion of a side of a substrate (3) by microwave plasma, where the portion covers a set of metallic plated-through holes. The flow through the portion is swept by a relative movement between the substrate and gas flow. A beam (54) is directed on the side of the substrate, and a reflected beam (56) is detected by reflection of the beam in a detection area on a surface of the substrate. A removal rate of semiconductor material in the portion is produced by the flow and controlled based on the detection of the reflected beam. The beam is a laser light beam. Independent claims are also included for the following: (1) a method for cleaning a surface of a substrate (2) a method for oxidizing or nitriding a surface of a substrate (3) a device for exposing a set of plated-through holes in a substrate.</p> |
