FORMATION METHOD AND FORMATION APPARATUS OF AMORPHOUS CARBON FILM

摘要

PROBLEM TO BE SOLVED: To provide a formation method and a formation apparatus of an amorphous carbon film achieving good coverage performance and having good surface roughness.SOLUTION: A control part 100 supplies a gas for a hydrophobic layer from a process gas introduction tube 17 to a reaction tube 2 to form the hydrophobic layer on a semiconductor wafer W. Next, the control part 100 controls a heater for temperature rise 16 to heat the interior of the reaction tube 2 to a predetermined temperature and supplies a gas for film formation from the process gas introduction tube 17 to the heated reaction tube 2. This process enables an amorphous carbon film to be formed on the semiconductor wafer W.