METHOD OF DEPOSITING METALS USING HIGH FREQUENCY PLASMA
摘要
Methods for depositing metal layers, and more specifically TaN layers, using CVD and ALD techniques are provided. In one or more embodiments, the method includes sequentially exposing a substrate to a metal precursor, or more specifically a tantalum precursor, followed by a high frequency plasma.
申请公布号
WO2013116495(A1)
申请公布日期
2013.08.08
申请号
WO2013US24107
申请日期
2013.01.31
申请人
APPLIED MATERIALS, INC.;MA, PAUL F.;LIU, GUOJUN;LAKSHMANAN, ANNAMALAI;WU, DIEN-YEH;SUBRAMANI, ANANTHA K.
发明人
MA, PAUL F.;LIU, GUOJUN;LAKSHMANAN, ANNAMALAI;WU, DIEN-YEH;SUBRAMANI, ANANTHA K.
