发明名称 |
DECOUPLING FINFET CAPACITORS |
摘要 |
PURPOSE: A decoupling FINFET capacitor is provided to obtain higher capacitance density compared to an MOM capacitor in the same size. CONSTITUTION: A silicon substrate is provided (402). An oxide layer is formed between si pins (404). A first electric conductor is formed between the si pins (406). An insulating layer is formed between the first electric conductor and the si pins (408). A second electric conductor is deposited on the first electric conductor (410). A second insulation layer is deposited on the second electric conductor (412). A third electric conductor is deposited on the second electric conductor (414). [Reference numerals] (402) Silicon substrate is provided; (404) Silicon pins on the silicon substrate and an oxide layer between the silicon pins are formed; (406) First electric conductor is formed between several silicon pins among a plurality of silicon pins on the oxide layer; (408) Insulating layer is formed between the first electric conductor and the silicon pins; (410) Second electric conductor is deposited on the first electric conductor; (412) Another insulating layer is deposited on the second electric conductor; (414) Third electric conductor is deposited on the second electric conductor |
申请公布号 |
KR20130088729(A) |
申请公布日期 |
2013.08.08 |
申请号 |
KR20120138748 |
申请日期 |
2012.12.03 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN CHUNG HUI |
分类号 |
H01L27/108;H01L21/8242 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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