发明名称 DEPOSITED FILM FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a deposited film forming method capable of suppressing influence to characteristics of a deposited film by back diffusion to the side of a deposition container of a cleaning gas, and further capable of properly determining an end point of a cleaning process in the deposition container.SOLUTION: A deposited film forming method repeats a deposited film formation step and a cleaning step of removing a by-product deposited in a deposition container and an exhaust piping 1122 using a cleaning gas introduced from a gas introduction means 1124, after taking out a base 1112 with a deposited film formed thereon from the deposition container 1101. A cleaning gas introduction means provides at least one reaction detection means 1128 at the deposition container rather than a part connected with the exhaust piping. The deposited film formation step forms the deposited film while regulating introduction conditions of the cleaning gas introduced from the cleaning gas introduction means according to a reaction detection situation of the reaction detection means. The cleaning step decides completion according to the reaction detection situation of the reaction detection means.
申请公布号 JP2013151714(A) 申请公布日期 2013.08.08
申请号 JP20120012122 申请日期 2012.01.24
申请人 CANON INC 发明人 OHIRA JUN;ABE YUKIHIRO;UENO TAKANORI
分类号 C23C16/44 主分类号 C23C16/44
代理机构 代理人
主权项
地址