发明名称 Lithography Model For 3D Resist Profile Simulations
摘要 Described herein is a method for simulating a three-dimensional spatial intensity distribution of radiation formed within a resist layer on a substrate resulting from an incident radiation, the method comprising: calculating an incoherent sum of forward propagating radiation in the resist layer and backward propagating radiation in the resist layer; calculating an interference of the forward propagating radiation in the resist layer and the backward propagating radiation in the resist layer; and calculating the three-dimensional spatial intensity distribution of radiation from the incoherent sum and the interference.
申请公布号 US2013204594(A1) 申请公布日期 2013.08.08
申请号 US201313757472 申请日期 2013.02.01
申请人 LIU PENG;ASML NETHERLANDS B.V. 发明人 LIU PENG
分类号 G06F17/50 主分类号 G06F17/50
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